High electron mobility transistors (HEMTs) exploit a heterostructure to confine a high-mobility two-dimensional electron gas at the interface between wide-bandgap semiconductor layers. This ...
The research team led by Professor Daehyun Kim from the Department of Electronic Engineering at Kyungpook National University ...
Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...
What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...
Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...
Infineon Technologies AG has launched the first of a new family of radiation-hardened (rad-hard) gallium nitride (GaN) transistors, based on its CoolGan technology. Complementing the company’s ...
The wish list of device properties that designers of power management systems would like to have is lengthy, but no single material is yet sufficient for the full range of power control applications.
Tokyo, Japan – Hailed as one of the greatest inventions of the 20 th century, transistors are integral components of modern electronics that amplify or switch electrical signals. As electronics become ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results